Ta₄V₂Zn₄O₁₆ is a mixed-metal oxide semiconductor compound combining tantalum, vanadium, and zinc in a layered or complex crystal structure. This material belongs to the family of ternary/quaternary oxide semiconductors and is primarily investigated in research contexts for functional electronic and photocatalytic applications rather than established commercial production. The combination of these metals—particularly vanadium's variable oxidation states and tantalum's stability—suggests potential for tunable bandgap and redox activity, making it a candidate for next-generation photocatalysts, sensors, or alternative semiconductor devices where conventional binary oxides fall short.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00360 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.430 | eV/atom | — |