Ta₄Ga₄O₁₆ is a mixed-metal oxide semiconductor compound combining tantalum and gallium in an ordered crystal structure. This material belongs to the family of complex metal oxides and is primarily of research interest for optoelectronic and photocatalytic applications, where its bandgap and electronic properties may offer advantages in UV detection, photocatalysis, or as a component in layered oxide heterostructures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.196 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.594 | eV/atom | — |