Ta4 Bi4 O16

semiconductor

· Ta4 Bi4 O16

Ta₄Bi₄O₁₆ is a mixed-metal oxide semiconductor combining tantalum and bismuth in a layered perovskite-related structure. This is primarily a research-phase material studied for photocatalytic and optoelectronic applications, where its bandgap and layered crystal structure make it a candidate for visible-light-driven processes and potential ferroelectric behavior.

Photocatalysis (water splitting, pollutant degradation)Visible-light photocatalystsOptoelectronic devices (research)Environmental remediationEnergy conversion (emerging)Ferroelectric materials (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.977	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.418	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta4 Bi4 O16

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control