Ta2 V1 Os1 — Properties & Data | MatWorld

Ta2 V1 Os1

semiconductor

· Ta2 V1 Os1

Ta₂VO is a ternary compound combining tantalum, vanadium, and oxygen, belonging to the mixed-metal oxide semiconductor family. This is primarily a research-phase material studied for its electronic and catalytic properties rather than an established commercial material. The tantalum-vanadium oxide system is of interest in materials research for potential applications in energy conversion, catalysis, and electronic devices where the combined redox activity of vanadium and the chemical stability of tantalum might offer advantages over single-component alternatives.

experimental semiconductorscatalytic materials researchelectrochemical energy storagethin-film electronicshigh-temperature applicationsmaterials research only

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00470	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3470	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta2 V1 Os1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control