Ta₂Ti₁N₃ is a ternary nitride ceramic compound combining tantalum, titanium, and nitrogen in a mixed-metal nitride structure. This material belongs to the transition metal nitride family, which exhibits semiconductor behavior with potential for high hardness and thermal stability. While primarily a research-phase material rather than a widely commercialized engineering ceramic, ternary nitrides of this type are being investigated for applications requiring a balance of hardness, electrical conductivity, and chemical resistance that exceed those of binary nitrides like TiN or TaN alone.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00250 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.013 | eV/atom | — |