Ta₂Si₂As₂ is an intermetallic semiconductor compound combining tantalum, silicon, and arsenic elements, representing an emerging material in the layered compound family. This material is primarily of research and developmental interest for potential applications in advanced electronics and quantum materials, where the combination of heavy transition metals (tantalum) with metalloid semiconductors (silicon, arsenic) may enable novel electronic, thermal, or topological properties not readily accessible in conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 155.4 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 101.2 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01560 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4460 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data