Ta2 Os1 W1

semiconductor

· Ta2 Os1 W1

Ta₂Os₁W₁ is an experimental mixed-metal oxide semiconductor composed of tantalum, osmium, and tungsten. This ternary compound belongs to the family of high-entropy or complex oxide semiconductors being investigated for advanced electronic and photocatalytic applications. The combination of refractory metals with high melting points and chemical stability makes this material noteworthy for extreme-environment or high-temperature semiconductor research where conventional semiconductors would fail.

research and developmenthigh-temperature electronicsphotocatalysisrefractory semiconductorsadvanced ceramics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	275.3	GPa	—
Shear Modulus(G)	132.7	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00120	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4530	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta2 Os1 W1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control