Ta2 Cu1 O6 — Properties & Data | MatWorld

Ta2 Cu1 O6

semiconductor

· Ta2 Cu1 O6

Ta₂Cu₁O₆ is a mixed-metal oxide semiconductor compound combining tantalum and copper in a layered or complex crystal structure. This is a research-phase material studied primarily for its electronic and photocatalytic properties, rather than an established commercial material. Interest centers on potential applications in photocatalysis, optoelectronics, and energy conversion due to the electronic properties that arise from combining high-valence tantalum with copper's variable oxidation states.

photocatalytic water splittingvisible-light photocatalysisoptoelectronic devices (experimental)oxide semiconductor researchenvironmental remediation (research phase)thin-film deposition research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.093	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.440	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta2 Cu1 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control