Ta2 As2 O8

semiconductor

· Ta2 As2 O8

Ta2As2O8 is a tantalum arsenate oxide semiconductor compound, representing a mixed-metal oxide material with potential electronic and photonic properties. This is a research-phase compound studied primarily for its semiconductor characteristics and crystal structure rather than established industrial applications. The material belongs to the broader family of complex oxides being investigated for next-generation optoelectronic devices, photocatalysis, and solid-state electronics, where the combination of tantalum and arsenic oxides may offer unique band gap engineering or catalytic properties not readily available in simpler binary oxides.

optoelectronic device researchphotocatalytic materialssolid-state electronics (experimental)semiconductor physics (laboratory)thin-film deposition studiesmaterials chemistry (academic research)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	92.09	GPa	—
Shear Modulus(G)	55.69	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.742	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.267	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta2 As2 O8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control