Ta1Zn1Os2 is an experimental intermetallic compound combining tantalum, zinc, and osmium—a research-stage material being investigated for semiconductor and structural applications where high hardness and thermal stability are desired. This ternary system represents an exploratory composition in the broader field of refractory intermetallics; it is not currently in widespread commercial production, but compounds in this family are of interest to materials researchers seeking alternatives to conventional semiconductors in extreme-environment or high-performance electronics contexts. The inclusion of osmium (a dense, hard refractory metal) suggests potential relevance to wear-resistant or high-temperature applications, though practical adoption would depend on synthesis scalability, cost, and performance validation against established materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 258.9 | GPa | — | ||
Shear Modulus(G) | 101.0 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.05400 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1570 | eV/atom | — |