Ta1 Sn1 O3

semiconductor

· Ta1 Sn1 O3

Ta₁Sn₁O₃ is a mixed-metal oxide semiconductor compound combining tantalum and tin oxides in a 1:1 ratio. This is primarily a research-phase material studied for its electronic and photocatalytic properties, belonging to the broader family of complex oxides used in advanced semiconductor and functional ceramic applications. Potential industrial interest lies in photocatalysis (water splitting, pollutant degradation), gas sensing, and thin-film electronics, where the dual-metal composition may offer tunable band gap and enhanced catalytic activity compared to single-metal oxide alternatives like TiO₂ or SnO₂.

photocatalytic water treatmentenvironmental remediationgas sensing devicesthin-film electronics researchadvanced ceramics development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00540	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.158	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta1 Sn1 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control