Ta1 Mn2 O3

semiconductor

· Ta1 Mn2 O3

Ta₁Mn₂O₃ is a ternary oxide semiconductor composed of tantalum and manganese in a mixed-valence crystal structure. This is a research-phase compound studied primarily for its electronic and magnetic properties rather than established industrial production. The material belongs to the family of transition metal oxides with potential applications in functional electronics, catalysis, and energy storage devices where the combined properties of tantalum's chemical stability and manganese's variable oxidation states could be exploited.

research semiconductorscatalytic materialsenergy storageoxide electronicsmagnetic oxidesexploratory materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.122	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta1 Mn2 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control