Ta1Mn1Ru2 is an intermetallic compound combining tantalum, manganese, and ruthenium in a 1:1:2 ratio, classified as a semiconductor material. This is a research-phase compound of interest in materials science for its potential electronic and structural properties arising from the combination of refractory metals (Ta, Ru) with transition metal (Mn). While not yet established in mainstream industrial production, materials in this class are investigated for advanced electronic applications and potential high-temperature performance where conventional semiconductors reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 228.5 | GPa | — | ||
Shear Modulus(G) | 40.54 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00420 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2070 | eV/atom | — |