Ta1 Mn1 As1

semiconductor

· Ta1 Mn1 As1

TaMnAs is a ternary intermetallic compound combining tantalum, manganese, and arsenic in a 1:1:1 stoichiometry. This is a research-phase material within the broader family of transition-metal pnictide semiconductors, studied primarily for its electronic and magnetic properties rather than for established commercial production. The material is of interest in condensed-matter physics and materials research for potential applications in spintronics, topological materials, and quantum device research, though it remains largely in the exploratory phase without widespread industrial adoption.

spintronics researchtopological materials explorationquantum electronics (experimental)condensed-matter physicsmagnetic semiconductor devices (developmental)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01310	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4130	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta1 Mn1 As1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control