Ta1 In1 Ru2

semiconductor

· Ta1 In1 Ru2

Ta1In1Ru2 is an intermetallic compound combining tantalum, indium, and ruthenium in a 1:1:2 ratio. This is a research-phase material within the family of ternary intermetallics, primarily investigated for potential use in high-temperature and electronic applications where conventional alloys fall short. While not yet established in mainstream commercial production, materials in this composition space are of interest to researchers developing advanced semiconductors, catalytic systems, and potentially high-temperature structural applications leveraging the refractory properties of tantalum and ruthenium combined with indium's electronic characteristics.

Experimental semiconductor researchHigh-temperature structural applicationsCatalytic materials developmentElectronic/optoelectronic devicesIntermetallic compound researchRefractory alloy development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	224.2	GPa	—
Shear Modulus(G)	101.9	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.03030	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3010	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta1 In1 Ru2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control