Ta1 Ga1 Os2

semiconductor

· Ta1 Ga1 Os2

Ta₁Ga₁Os₂ is an intermetallic semiconductor compound combining tantalum, gallium, and osmium—a research-phase material exploring high-density, refractory properties for extreme-environment applications. This ternary compound belongs to the family of transition-metal-based semiconductors and represents experimental materials chemistry rather than established commercial production. While not yet in widespread industrial use, materials in this compositional family are of interest for high-temperature electronics, radiation-resistant devices, and specialized photonic applications where conventional semiconductors fail.

high-temperature electronics researchradiation-hardened devicesexperimental refractory semiconductorsextreme-environment sensingadvanced materials developmentspace and nuclear applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	269.6	GPa	—
Shear Modulus(G)	118.1	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.04770	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3110	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta1 Ga1 Os2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control