Ta1 Al1 Os2

semiconductor

· Ta1 Al1 Os2

Ta₁Al₁Os₂ is an experimental intermetallic compound combining tantalum, aluminum, and osmium—three refractory elements typically studied for ultra-high-temperature structural applications. This material remains largely in the research phase; compounds in this family are investigated for extreme thermal environments where conventional superalloys degrade, though practical manufacturing and property consistency remain open challenges.

high-temperature structural researchrefractory alloy developmentaerospace propulsion (experimental)thermal protection systems (developmental)materials science research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.04150	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5770	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ta1 Al1 Os2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control