Ta1 is a tantalum-based semiconductor material, likely a tantalum compound or doped tantalum system designed for electronic applications. While the exact composition is not specified, tantalum semiconductors are valued in the electronics industry for their high melting point, excellent corrosion resistance, and stable electrical properties across demanding operating conditions. This material would be selected over alternatives where thermal stability, chemical inertness, and reliable performance in harsh environments are critical design requirements.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 198.6 | GPa | — | ||
Shear Modulus(G) | 58.14 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00380 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.000 | eV/atom | — |