Sr₆Ga₂N₆ is a wide-bandgap semiconductor compound belonging to the nitride family, specifically a strontium gallium nitride composition. This material is primarily of research interest as an emerging semiconductor for high-temperature and high-power electronic applications, offering potential advantages in UV optoelectronics and power device design due to the favorable electronic properties characteristic of nitride-based semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 69.17 | GPa | — | ||
Shear Modulus(G) | 41.66 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2897 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8280 | eV/atom | — |