Sr3As1N1 is an experimental ternary semiconductor compound combining strontium, arsenic, and nitrogen. This material belongs to the family of mixed-anion semiconductors, which are of significant research interest for optoelectronic and photovoltaic applications due to their tunable band gaps and potential for high-performance device performance. While not yet commercialized, Sr3AsN and related compounds are being investigated as alternatives to conventional III-V semiconductors for next-generation solar cells, light-emitting devices, and high-frequency electronics, offering potential advantages in cost, abundance, or performance stability compared to conventional gallium-based semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 51.97 | GPa | — | ||
Shear Modulus(G) | 42.22 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1327 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.2170 | eV/atom | — |