SnSe2 is a layered semiconductor compound composed of tin and selenium, belonging to the transition metal dichalcogenide (TMD) family. This material is primarily investigated in research and early-stage applications for its direct bandgap properties and strong light-matter interactions, making it attractive for next-generation optoelectronic and photovoltaic devices where traditional silicon has fundamental limitations. Its layered crystal structure and ability to be exfoliated into few-layer or monolayer forms position it as a candidate material for flexible electronics, photodetectors, and 2D heterostructure engineering, though large-scale industrial adoption remains limited compared to more mature semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 14.78 | GPa | — | ||
| ↳ | 37.68 | GPa | — | ||
Exfoliation Energy(Eexf) | 93.47 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G)2 entries | 10.04 | GPa | — | ||
| ↳ | 20.75 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.715 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.620 | eV | — | ||
| ↳ | 0.4710 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 27.42 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -236.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01320 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.4308 | eV/atom | — | ||
| ↳ | -0.3343 | eV/atom | — |