Tin selenide (SnSe) is a layered IV-VI semiconductor compound with a two-dimensional crystal structure that can be mechanically exfoliated into thin films. While primarily in the research and development phase, SnSe shows promise in thermoelectric energy conversion and optoelectronic devices due to its narrow bandgap and strong anisotropic transport properties, positioning it as a candidate material for next-generation thermal-to-electric power generation and infrared sensing applications where conventional semiconductors have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 50.50 | GPa | — | ||
Exfoliation Energy(Eexf) | 143.6 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2600 | - | — | ||
Shear Modulus(G) | 34.08 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.897 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.200 | eV | — | ||
| ↳ | 0.1990 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 45.70 | - | — | ||
| ↳ | 865.9 | - | — | ||
| ↳ | 239.4 range 73.46–405.4median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -162.6 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01490 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.4876 | eV/atom | — | ||
| ↳ | -0.4806 | eV/atom | — |