SnHfO2S

semiconductor

· SnHfO2S

SnHfO₂S is an experimental quaternary semiconductor compound combining tin, hafnium, oxygen, and sulfur. This material belongs to the emerging class of mixed-anion semiconductors being investigated for optoelectronic and photocatalytic applications, where the dual anion (oxide-sulfide) system offers tunable bandgap and enhanced charge carrier properties compared to single-anion oxides or sulfides.

photocatalytic water splittingoptoelectronic devicesvisible-light photodetectorsenvironmental remediation (research)thin-film semiconductors (experimental)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.700	eV	—
Magnetic Moment(μB)	-0.000134	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SnHfO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control