SnGaO2F

semiconductor

· SnGaO2F

SnGaO₂F is an experimental mixed-metal oxide fluoride semiconductor combining tin, gallium, oxygen, and fluorine. This is a research-phase compound within the broader family of metal oxide fluorides, which are being investigated for wide-bandgap semiconductor and optoelectronic applications where conventional materials face limitations. The fluorine incorporation and mixed-metal composition suggest potential for tuning electronic properties, though industrial adoption remains limited; applications would likely target next-generation transparent conductors, UV-responsive devices, or novel photocatalytic systems where the unique combination of metal cations and anionic fluorine offers advantages over single-element oxides or traditional semiconductors.

Experimental wide-bandgap semiconductorsTransparent conductive oxides (research phase)UV optoelectronicsPhotocatalytic applicationsAdvanced electronic coatings (development stage)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.800	eV	—
Magnetic Moment(μB)	8.293e-16	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.2600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SnGaO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control