SnGaN3 — Properties & Data | MatWorld

SnGaN3

ceramic

· SnGaN3

SnGaN3 is an experimental ternary ceramic compound combining tin (Sn), gallium (Ga), and nitrogen (N), belonging to the family of wide-bandgap semiconductors and nitride ceramics. This material is primarily of research interest for next-generation power electronics and high-temperature applications, as the nitride family offers superior thermal stability and electrical properties compared to traditional silicon-based materials. While not yet in widespread commercial production, SnGaN3 and related tin-gallium nitride compounds are being investigated for their potential in high-frequency switching devices, RF components, and extreme-environment electronics where conventional semiconductors reach performance limits.

wide-bandgap semiconductorspower electronics researchhigh-temperature electronicsRF/microwave devicesnext-generation semiconductor development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	1.845	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.480	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SnGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental