Sn8 O4 F8

semiconductor

· Sn8 O4 F8

Sn8O4F8 is a tin oxide fluoride compound belonging to the mixed-anion oxide semiconductor family, combining tin oxidation states with fluorine substitution to modulate electronic properties. This is a research-phase material studied primarily for its potential in optoelectronic and photocatalytic applications where fluorine doping modifies band gap and carrier dynamics compared to conventional tin oxides. The fluorine incorporation makes it relevant to emerging thin-film device technologies and heterogeneous catalysis, though industrial deployment remains limited and material development is ongoing.

thin-film semiconductorsphotocatalysis researchoptoelectronic devicesband gap engineeringfluorine-doped oxidesenvironmental remediation catalysts

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.378	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.995	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Sn8 O4 F8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control