Sn₄P₄S₁₂ is a tin-based semiconductor compound belonging to the metal phosphide-sulfide family, representing a class of materials engineered for their electronic and photonic properties through combination of main group elements. This is primarily a research-phase material studied for potential applications in solid-state electronics and energy conversion, where its mixed anion composition offers tunable band gap and transport characteristics compared to binary semiconductors. The material's interest lies in exploring new chemistries for thermoelectric devices, photovoltaics, and optoelectronic applications where conventional semiconductors reach fundamental limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 27.50 | GPa | — | ||
Shear Modulus(G) | 16.96 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.732 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4200 | eV/atom | — |