Sn4O8 is an oxychalcogenide semiconductor compound containing tin and oxygen, representing an emerging material class that bridges traditional metal oxides and more complex ternary semiconductors. This material is primarily investigated in research contexts for photocatalytic and optoelectronic applications, where its bandgap and electronic structure offer potential advantages over conventional tin oxide (SnO2) or other simple binary oxides. The layered or mixed-valence nature of this composition makes it of particular interest for environmental remediation, gas sensing, and next-generation thin-film device development, though it remains largely experimental compared to mature semiconductor alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 199.7 | GPa | — | ||
Shear Modulus(G) | 104.2 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5796 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.708 | eV/atom | — |