Sn1Se0.99S0.01
semiconductor· Sn1Se0.99S0.01
Sn1Se0.99S0.01 is a tin-based chalcogenide semiconductor with a near-stoichiometric tin selenide composition minimally doped with sulfur, belonging to the IV-VI semiconductor family. This is a research-phase material primarily investigated for thermoelectric and optoelectronic applications where the partial sulfur substitution modulates bandgap and carrier transport properties relative to pure SnSe. The material represents an experimental approach to tuning the performance of tin selenide—a naturally layered semiconductor of interest for mid-range thermal energy conversion and infrared detection—without introducing bulk dopants.
thermoelectric power generationinfrared detectorsresearch semiconductorsbandgap engineeringwaste heat recoveryoptoelectronic devices
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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