Sn1Se0.01S0.99
semiconductor· Sn1Se0.01S0.99
Sn₁Se₀.₀₁S₀.₉₉ is a tin-based chalcogenide semiconductor with a mixed sulfur-selenium anion sublattice, representing a doped or alloyed variant of tin sulfide (SnS). This material belongs to the narrow-bandgap semiconductor family and is primarily of research interest for optimizing optoelectronic and thermoelectric performance through controlled chalcogen substitution. The selenium doping modulates electronic structure and carrier transport relative to pure SnS, making it relevant for next-generation photovoltaic devices, IR detectors, and thermoelectric energy conversion where tuning of bandgap and carrier mobility is critical.
thin-film photovoltaicsinfrared detectorsthermoelectric generatorsoptoelectronic researchbandgap engineeringemerging semiconductors
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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