Tin disulfide (SnS₂) is a layered semiconductor compound belonging to the metal dichalcogenide family, characterized by a two-dimensional crystal structure with weak van der Waals interlayer bonding. This material is primarily investigated in research settings for optoelectronic and energy storage applications, where its tunable bandgap, high optical absorption, and ion intercalation properties offer advantages over bulk semiconductors in thin-film device architectures. SnS₂ is notable for emerging applications in photodetectors, photocatalysis, and lithium-ion battery anodes, though it remains largely in the development phase rather than established industrial production.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 42.97 | GPa | — | ||
Shear Modulus(G) | 26.30 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.218 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4400 | eV/atom | — |