Sn1 is a tin-based semiconductor material, likely a pure tin phase or tin-dominant compound used in electronic and optoelectronic applications. Tin semiconductors are employed in photovoltaic devices, infrared detectors, and emerging thin-film electronics where tin's narrow bandgap and carrier mobility offer advantages in thermal or narrow-wavelength sensing. This material may represent either a commercial tin compound or experimental research composition; tin-based semiconductors are of growing interest as alternatives to conventional silicon and lead-based systems, particularly in flexible electronics and next-generation photonics where tin's lower toxicity profile is preferred over legacy materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 46.73 | GPa | — | ||
Shear Modulus(G) | 10.52 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02640 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.06400 | eV/atom | — |