Sn0.5GaZn5.5O8
semiconductor· Sn0.5GaZn5.5O8
Sn₀.₅GaZn₅.₅O₈ is a mixed-metal oxide semiconductor compound combining tin, gallium, and zinc cations in a spinel-related crystal structure. This is primarily a research-phase material explored for wide-bandgap semiconductor applications, particularly in transparent conducting oxides (TCOs) and optoelectronic devices where the combination of elements offers tunable electrical and optical properties. The material represents an emerging class of multicomponent oxides designed to achieve enhanced performance in next-generation electronic and photonic applications compared to single-cation alternatives.
Transparent conducting filmsOptoelectronic devicesSolar cell electrodesResearch semiconductorsWide-bandgap electronics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.