Sn0.2Pb0.8Se1
semiconductor· Sn0.2Pb0.8Se1
Sn₀.₂Pb₀.₈Se is a lead-tin selenide compound belonging to the IV-VI narrow bandgap semiconductor family, typically studied in research contexts for infrared and thermoelectric applications. This material combines tin and lead cations with selenium in a fixed stoichiometry, creating a solid solution within the lead selenide system that can be engineered for mid- to long-wavelength infrared detection and thermal energy conversion. The partial substitution of tin for lead modulates the bandgap and lattice properties compared to pure PbSe, making it relevant for specialized detector arrays and waste-heat recovery systems where narrow-bandgap semiconductors offer advantages over wide-bandgap alternatives.
infrared photodetectorsthermal imaging sensorsthermoelectric cooling/power generationmilitary/aerospace sensingresearch photonics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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