Sn0.17Te1Pb0.83

semiconductor

· Sn0.17Te1Pb0.83

Sn₀.₁₇Te₁Pb₀.₈₃ is a lead-tin telluride compound semiconductor belonging to the IV-VI narrow bandgap material family, designed for infrared detection and thermal imaging applications. This composition represents a deliberate alloy variation of PbTe (lead telluride) with tin substitution, typically developed for room-temperature or near-room-temperature infrared sensor performance. The material is primarily a research and specialized industrial compound rather than a commodity material, valued in applications requiring mid- to long-wavelength infrared sensitivity where bandgap engineering through alloying enables wavelength tuning and improved thermal stability compared to pure PbTe.

infrared detectorsthermal imaging sensorsremote sensingmilitary/aerospace surveillanceresearch-grade optoelectronicsbandgap engineering applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1500	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Sn0.17Te1Pb0.83

Electrical Properties

Regulatory Screening

Environmental

Export Control