Sn0.15Pb0.85Se1 is a lead-tin selenide compound semiconductor, a narrow-bandgap material belonging to the IV-VI semiconductor family. This composition represents a doped or alloyed variant of lead selenide (PbSe), where tin substitution modulates the electronic and optical properties for mid-infrared applications. As a research material rather than a commercial off-the-shelf product, it is investigated primarily for infrared detection and sensing where its tunable bandgap offers advantages over pure binary compounds, though it remains largely in the experimental stage for specialized optoelectronic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1300 | eV | — |