Sn0.13Pb0.87Se1

semiconductor
· Sn0.13Pb0.87Se1

Sn₀.₁₃Pb₀.₈₇Se is a lead-tin selenide compound belonging to the IV-VI narrow-bandgap semiconductor family, typically investigated for narrow-gap optoelectronic and thermoelectric applications. This material composition sits within the PbSe-SnSe solid solution system and is primarily of research interest rather than established industrial production; it is studied for infrared detectors, thermal imaging sensors, and potential thermoelectric energy conversion where narrow bandgap semiconductors offer sensitivity in the mid-to-far infrared spectrum. The lead-rich composition makes it notable for applications requiring room-temperature or moderately cooled operation in the 3–14 μm wavelength range, though researchers continue to optimize doping and composition to improve performance relative to pure PbSe or commercial HgCdTe alternatives.

infrared detectorsthermal imaging sensorsthermoelectric materialsnarrow-bandgap semiconductorsresearch/development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.