Sn0.05Pb0.95Se1
semiconductorSn₀.₀₅Pb₀.₉₅Se is a lead-tin selenide compound belonging to the IV-VI semiconductor family, where a small tin dopant is substituted into a lead selenide host lattice. This is primarily a research material studied for infrared detection and thermal imaging applications, where the narrow bandgap and narrow direct band structure of lead selenide semiconductors enable sensitivity in the mid-to-long wavelength infrared region. The tin doping modulates the electronic properties and can influence carrier concentration and mobility; the material represents experimental work in optimizing lead chalcogenide compositions for improved detector performance compared to undoped lead selenide, though it remains largely in academic development rather than widespread industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |