Sn0.03Te1Pb0.97

semiconductor

· Sn0.03Te1Pb0.97

Sn₀.₀₃Te₁Pb₀.₉₇ is a lead telluride-based semiconductor alloy with tin doping, belonging to the IV-VI narrow-bandgap semiconductor family. This material is primarily explored in thermoelectric applications and infrared detection, where its bandgap and carrier mobility characteristics enable efficient thermal-to-electric conversion or radiation sensing. The tin doping modulates the electronic properties of the lead telluride host, making it relevant for mid-to-long-wavelength infrared detectors and thermoelectric generators operating in moderate temperature ranges.

infrared photodetectorsthermoelectric generatorsthermal imaging sensorsradiative cooling applicationsresearch-grade semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2100	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Sn0.03Te1Pb0.97

Electrical Properties

Regulatory Screening

Environmental

Export Control