Sn0.03Pb0.97Se1

semiconductor

· Sn0.03Pb0.97Se1

Sn0.03Pb0.97Se is a tin-lead selenide compound, a narrow-bandgap semiconductor belonging to the lead chalcogenide family with significant tin doping. This material is primarily investigated for infrared (IR) detection and thermal imaging applications, where its tunable bandgap and high sensitivity to mid- to long-wavelength IR radiation make it attractive for advanced sensing systems. The tin substitution modifies the electronic structure of lead selenide, enabling optimization of detector performance for specific wavelength ranges used in thermal cameras, radiometry, and military surveillance platforms.

infrared detectorsthermal imaging sensorsradiometry instrumentationmilitary surveillance opticsnarrow-bandgap semiconductorscryogenic cooling applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2100	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Sn0.03Pb0.97Se1

Electrical Properties

Regulatory Screening

Environmental

Export Control