SmAs is a III-V compound semiconductor formed from samarium and arsenic, belonging to the rare-earth pnictide family of materials. This material is primarily of research interest for advanced optoelectronic and thermoelectric applications, where rare-earth semiconductors offer potential advantages in high-temperature operation and specialized band structure engineering. SmAs represents an emerging class of materials being investigated for next-generation device architectures where conventional semiconductors reach performance limits, though industrial adoption remains limited compared to mainstream GaAs or InP platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 76.80 | GPa | — | ||
Poisson's Ratio(ν) | 0.2300 | - | — | ||
Shear Modulus(G) | 54.84 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.931 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.030 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | 7.607 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4594 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.121 | eV/atom | — |