SiTe2
semiconductorSiTe2 is a layered semiconductor compound composed of silicon and tellurium, belonging to the family of transition metal dichalcogenide (TMD)-like materials with a two-dimensional crystal structure. This material is primarily of research and developmental interest rather than established in high-volume industrial production, with potential applications in next-generation electronic and optoelectronic devices that exploit its layer-dependent properties and tunable bandgap. Engineers evaluating SiTe2 would consider it for emerging applications requiring atomically-thin semiconductors, particularly where mechanical flexibility, layer isolation, or integration into heterostructure devices offers advantages over conventional bulk semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Exfoliation Energy(Eexf) | — | meV/atom | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr) | — | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij) | — | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |