SiTe2
semiconductorSiTe2 is a layered semiconductor compound composed of silicon and tellurium, belonging to the family of transition metal dichalcogenide (TMD)-like materials with a two-dimensional crystal structure. This material is primarily of research and developmental interest rather than established in high-volume industrial production, with potential applications in next-generation electronic and optoelectronic devices that exploit its layer-dependent properties and tunable bandgap. Engineers evaluating SiTe2 would consider it for emerging applications requiring atomically-thin semiconductors, particularly where mechanical flexibility, layer isolation, or integration into heterostructure devices offers advantages over conventional bulk semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 35.54 | GPa | — | ||
Exfoliation Energy(Eexf) | 92.34 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.3300 | - | — | ||
Shear Modulus(G) | 12.85 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.493 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.850 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 92.65 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | 2.257 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.09580 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.09425 | eV/atom | — |