SiSnO₃ is a ternary oxide semiconductor compound combining silicon, tin, and oxygen elements. This material belongs to the broader family of mixed-metal oxides and represents an emerging research compound rather than a mature commercial material; it is primarily investigated for potential applications in optoelectronics and energy conversion due to its semiconducting properties and the favorable band structure characteristics imparted by tin incorporation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 211.9 | GPa | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 144.3 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.352 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.755 | eV | — | ||
| ↳ | 2.500 | eV | — | ||
| ↳ | 1.368 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 9.557 | - | — | ||
Magnetic Moment(μB)2 entries | 0.00180 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -94.63 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4143 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -1.023 | eV/atom | — | ||
| ↳ | 1.220 | eV/atom | — | ||
| ↳ | -1.902 | eV/atom | — |