SiSe₂ is a layered semiconductor compound composed of silicon and selenium, belonging to the class of chalcogenide semiconductors. It is primarily of research and developmental interest rather than an established commercial material, with potential applications in optoelectronic devices, photodetectors, and energy conversion systems where its tunable bandgap and layer-dependent properties could be leveraged. Engineers considering SiSe₂ should recognize it as an emerging material suitable for exploratory projects in next-generation photovoltaics, 2D device engineering, and specialty sensing applications, though manufacturing scalability and long-term reliability data remain limited compared to silicon or established III-V semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 17.91 | GPa | — | ||
Poisson's Ratio(ν) | 0.3300 | - | — | ||
Shear Modulus(G) | 10.59 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.632 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.740 | eV | — | ||
| ↳ | 1.720 | eV | — | ||
| ↳ | 1.718 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 4.820 | - | — | ||
| ↳ | 7.524 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -319 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000100 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3709 | eV/atom | — |