SiScO2F is a rare-earth doped fluoride-oxide semiconductor compound combining silicon, scandium, oxygen, and fluorine constituents. This material belongs to the family of fluoride-based semiconductors and appears to be primarily a research compound rather than an established commercial material; it is being investigated for its potential optical and electronic properties enabled by scandium doping and fluorine incorporation, which may offer advantages in specific photonic or optoelectronic applications where conventional semiconductors are limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.300 | eV | — | ||
Magnetic Moment(μB) | -3.591e-15 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.120 | eV/atom | — |