Silicon is a crystalline semiconductor element that forms the foundation of modern microelectronics and photovoltaics. It is the primary material for integrated circuits, discrete transistors, and solar cells due to its ability to be precisely doped and processed into p-n junctions that control electrical current. Beyond electronics, silicon is valued in MEMS (micro-electromechanical systems), optical applications, and high-temperature structural uses where its combination of strength, thermal stability, and controlled electrical properties outperform metals and insulators.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Young's Modulus(E) | 130.0 | GPa | — |
5 interactive curves for this material
Stress-strain, S-N fatigue and environmental knockdown curves are free with an account.
Create free account| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Melting Point / Solidus(Tm) | 1,687 | K | — | ||
Specific Heat Capacity(Cp) | 700 | J/(kg·K) | — | ||
Specific Heat vs Temperature(Cp(T)) | Curve (6 pts) | J/(kg·K) | — | ||
Thermal Conductivity(k) | 150 | W/(m·K) | Measured | ||
Thermal Conductivity vs Temperature(k(T))4 entries | Curve (7 pts) | W/(m·K) | — | ||
| ↳ | Curve (17 pts) | W/(m·K) | Measured · single crystal | ||
| ↳ | Curve (26 pts) | W/(m·K) | Measured · single crystal | ||
| ↳ | Curve (45 pts) | W/(m·K) | Measured · bulk | ||
Coefficient of Thermal Expansion(α (CTE)) | 0.00000260 | 1/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.329 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)4 entries | 1.120 | eV | — | ||
| ↳ | 0.7310 | eV | DFT · OptB88vdW | ||
| ↳ | 1.277 | eV | DFT · TBmBJ | ||
| ↳ | 1.220 | eV | DFT · HSE06 | ||
Dielectric Constant (Relative Permittivity)(εr) | 11.70 | - | — | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 13.49 | - | DFT · OptB88vdW | ||
| ↳ | 10.74 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.3100 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.4500 | me | DFT · OptB88vdW · 27°C | ||
Electrical Resistivity(ρe) | 2,300 | Ω·m | — | ||
Thermoelectric Power Factor(PF)2 entries | 0.00405 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00384 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -224 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 230.2 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 33.23 | % | DFT · TBmBJ |
16 interactive curves for this material
Stress-strain, S-N fatigue and environmental knockdown curves are free with an account.
Create free account| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Extinction Coefficient vs Wavelength(k(λ)) | Curve (121 pts) | - | Measured · 27°C | ||
Refractive Index vs Wavelength(n(λ)) | — | - | 15 entriesClick to expand | ||
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data