SiInO₂S is a quaternary ceramic compound combining silicon, indium, oxygen, and sulfur—a mixed-anion ceramic in the oxysulfide family. This is primarily a research-phase material studied for its potential in optoelectronic and semiconductor applications where the combination of oxide and sulfide chemistry creates tunable electronic and optical properties distinct from binary oxides or sulfides alone.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 0.000126 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.600 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data