SiHfO2S

semiconductor

· SiHfO2S

SiHfO2S is an experimental quaternary semiconductor compound combining silicon, hafnium, oxygen, and sulfur elements. This material belongs to the family of high-k dielectrics and wide-bandgap semiconductors under investigation for next-generation electronic and optoelectronic devices. Research focus on this composition centers on potential applications requiring high dielectric constant, thermal stability, and wide bandgap properties—characteristics valuable for advanced gate dielectrics, high-power electronics, and UV optoelectronics where conventional materials approach their performance limits.

Advanced gate dielectricsHigh-power semiconductor devicesWide-bandgap electronicsUV optoelectronicsThermal barrier coatingsResearch and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.900	eV	—
Magnetic Moment(μB)	-0.000148	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SiHfO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control