SiGaO2N — Properties & Data | MatWorld

SiGaO2N

ceramic

· SiGaO2N

SiGaO₂N is an oxynitride ceramic compound combining silicon, gallium, oxygen, and nitrogen phases, typically investigated as an advanced ceramic material for high-temperature and electronic applications. This material family is primarily explored in research contexts for semiconductor applications, thermal barrier coatings, and refractory uses where the combined properties of nitride and oxide phases offer potential advantages over single-phase alternatives. Engineers would consider SiGaO₂N when conventional silicon nitride or alumina cannot meet simultaneous demands for thermal stability, electrical properties, or oxidation resistance in demanding aerospace or power electronics environments.

high-temperature ceramicssemiconductor substratesthermal barrier coatingsrefractory applicationsadvanced electronics packagingresearch/experimental material

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.3831	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.460	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SiGaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental