SiGaN3 — Properties & Data | MatWorld

SiGaN3

ceramic

· SiGaN3

SiGaN3 is an experimental ceramic compound combining silicon, gallium, and nitrogen—a member of the wide-bandgap semiconductor and advanced ceramic family being investigated for high-temperature, high-power applications. Research into this material targets next-generation power electronics, RF (radiofrequency) devices, and extreme-environment thermal management where conventional silicon and even gallium nitride (GaN) face performance limitations. The material's potential appeal lies in combining the thermal stability and chemical robustness of silicon nitride with the electronic properties of gallium nitride, though it remains largely in academic development and is not yet established in mainstream industrial production.

high-temperature power electronicsRF semiconductor deviceswide-bandgap electronics researchaerospace thermal managementextreme-environment applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Filter by

Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	2.140	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.740	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

SiGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental